The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Aug. 19, 2003
Applicant:
Akio Kitamura, Nagano, JP;
Inventor:
Akio Kitamura, Nagano, JP;
Assignee:
Fuji Electronic Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/82 ; H01L021/8238 ; H01L021/8234 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device has a depletion type MIS transistor, a transistor forming a masked ROM, and a submicron CMOS integrated on a single or common semiconductor substrate, while minimizing the steps of manufacturing the depletion type MIS transistor. During implantation of ions for changing an enhancement type transistor into a depletion type transistor, impurity ions can be implanted to change the transistor forming the masked ROM into resistance, so that the depletion type transistor, the transistor constituting the mark ROM, and a submicron CMOS can be integrated on a single or common semiconductor substrate.