The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Dec. 11, 2002
Junko Kobayashi, Sunnyvale, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Junko Kobayashi, Sunnyvale, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Lumileds Lighting U.S., LLC, San Jose, CA (US);
Abstract
A method of forming a light emitting device includes providing a sapphire substrate, growing an AlGaN first layer by vapor deposition on the substrate at a temperature between about 1000° C. and about 1180° C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.