The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Mar. 28, 2002
Takashi Nishikawa, Osaka, JP;
Kenji Iijima, Kyoto, JP;
Takashi Nishikawa, Osaka, JP;
Kenji Iijima, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
After an underlying layer, made of a single crystal metal material, has been formed on a semiconductor layer, part or all of the underlying layer is changed into a metal oxide layer by supplying oxygen thereto from above the underlying layer. Then, a ferroelectric or high-dielectric-constant film is further formed on the metal oxide layer. Since the film made of a metal material is formed on the semiconductor layer, a silicon dioxide film or the like is not formed easily. Thus, a dielectric film, which includes an underlying layer with a high dielectric constant and has a large capacitance per unit area, can be obtained. Various defects such as interface states in the semiconductor layer can also be reduced advantageously if these process steps are performed after a thermal oxide film has been formed on the semiconductor layer.