The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Dec. 13, 2002
Ill Soo Choi, Gumi, KR;
Hyun Kyo Choi, Gumi, KR;
Ill Soo Choi, Gumi, KR;
Hyun Kyo Choi, Gumi, KR;
Siltron, Inc., Gumi, KR;
Abstract
A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed. The method includes the steps of loading a low melting point dopant inside a low melting point dopant feeding instrument having vacuum-tight sealed sidewall and upper portions and an open bottom portion with net-like structure having many holes, and dipping the bottom portion of the low melting point dopant feeding instrument in a molten silicon liquid contained inside a quartz crucible. The low melting point dopant is directly dissolved in the molten silicon liquid or evaporated and then finally dissolved in the form of a gas phase into the molten silicon liquid through the open holes of the bottom portion of the melting point dopant feeding instrument.