The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Apr. 12, 2002
Michael Antonell, Summerfield, NC (US);
Jennifer A. Antonell, Summerfield, NC (US);
Erik Cho Houge, Orlando, FL (US);
Ryan Keith Maynard, St. Cloud, FL (US);
Darrell L. Simpson, Gotha, FL (US);
Michael Antonell, Summerfield, NC (US);
Jennifer A. Antonell, Summerfield, NC (US);
Erik Cho Houge, Orlando, FL (US);
Ryan Keith Maynard, St. Cloud, FL (US);
Darrell L. Simpson, Gotha, FL (US);
Agere Systems, Inc., Allentown, PA (US);
Abstract
A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.