The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Feb. 25, 2003
Applicant:

Haruo Tanaka, Kyoto, JP;

Inventor:

Haruo Tanaka, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B006/12 ; H01L029/06 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor light-emitting elementincludes a silicon single crystal substratehaving a first and a second surfacesin head-tail relationship with each other, a GaN-based semiconductor laminateformed on a selected region of the first surface with a predetermined conductive intermediate layerinterposed therebetween, a first electrode layerhaving a portion in contact with an uppermost layer of the GaN-based semiconductor laminateand insulated from the monocrystal silicon substrate, and a second electrode layerformed on a suitable portion of the monocrystal silicon substrate. The monocrystal silicon substrateis formed with a light guidefor directing light emitted from the GaN-based semiconductor laminatetoward the second surface


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