The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jul. 18, 2003
Erwin J. Prinz, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Erwin J. Prinz, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A non volatile memory () includes an array () of transistors () having discrete charge storage elements (). The transistors are programmed by using a two step programming method () where a first step () is hot carrier injection (HCl) programming with low gate voltages. A second step () is selectively utilized on some memory cells to modify the injected charge distribution to enhance the separation of charge distribution between each memory bit within the transistor memory cell. The second step of programming is implemented without adding significant additional time to the programming operation. In one example, the first step injects electrons and the second step injects holes. The resulting distribution of the two steps removes electron charge in the central region of the storage medium.