The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jan. 28, 2003
Douglas D. Smith, Mesa, AZ (US);
Myron Buer, Gilbert, AZ (US);
Laurentiu Vasiliu, San Diego, CA (US);
Bassem Radieddine, Irvine, CA (US);
Douglas D. Smith, Mesa, AZ (US);
Myron Buer, Gilbert, AZ (US);
Laurentiu Vasiliu, San Diego, CA (US);
Bassem Radieddine, Irvine, CA (US);
Broadcom Corporation, Irvine, CA (US);
Abstract
The present invention relates to a programmable memory cell and a method of setting a state for a programmable memory cell. The memory cell includes two thin gated fuses adapted to set the state of the memory cell. A level shifter device is connected to the gated fuses and is adapted to stand off a high voltage when setting the state of the memory cell. At least one switch transistor is connected to at least the level shifter device and is adapted to select at least one of the gated fuses, enabling a high voltage to be communicated thereto, thus setting the state of the memory cell.