The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Feb. 13, 2003
Applicant:

David Coutu, East Hampton, CT (US);

Inventor:

David Coutu, East Hampton, CT (US);

Assignee:

IMP Inc., Plainville, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K017/56 ;
U.S. Cl.
CPC ...
Abstract

A P-CHANNEL MOSFET is configured as a high side switch by arranging a capacitor between the P-CHANNEL MOSFET gate and a pair of push/pull transistors in a control circuit. A pull-up resistor is connected with the high side supply, one leg of the capacitor and with the gate of the P-CHANNEL MOSFET. In a two-phase electrical drive circuit, a pair of P-CHANNEL MOSFETS is connected with the high side supply and a pair of N-CHANNEL MOSFETS is connected with the low side supply.


Find Patent Forward Citations

Loading…