The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Jun. 06, 2003
Applicants:

Gennadiy Nemtsev, Stoughton, MA (US);

Hui Wang, North Kingstown, RI (US);

Yingping Zheng, North Kingstown, RI (US);

Rajesh Nair, Chandler, AZ (US);

Inventors:

Gennadiy Nemtsev, Stoughton, MA (US);

Hui Wang, North Kingstown, RI (US);

Yingping Zheng, North Kingstown, RI (US);

Rajesh Nair, Chandler, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L023/48 ;
U.S. Cl.
CPC ...
Abstract

A transistor () is formed as a matrix of transistor cells () that have drain metal strips () for contacting drains () of the transistor cells and source metal strips () for contacting sources () of the transistor cells. An interconnect layer () overlying the matrix of transistor cells has first portions () that contact one the drain metal strips with first and second vias () and second portions () that contact one of the source metal strips with third and fourth vias ().


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