The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jul. 10, 2003
Applicants:
Sheung Hee Park, Pleasanton, CA (US);
Richard M. Fastow, Cupertino, CA (US);
Dong-hyuk Ju, Cupertino, CA (US);
Inventors:
Sheung Hee Park, Pleasanton, CA (US);
Richard M. Fastow, Cupertino, CA (US);
Dong-Hyuk Ju, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/788 ;
U.S. Cl.
CPC ...
Abstract
A flash memory cell of the present invention comprises a floating gate, having a charge trapping region and a fin region. A source region and a drain region is formed proximate the floating gate. A control gate is formed above the charge trapping region of the floating gate. The fin region advantageously reduces leakage current, thereby allowing further scaling of the cell.