The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Apr. 18, 2003
Applicants:

Hideaki Yamauchi, Kawasaki, JP;

Daisuke Matsubara, Kawasaki, JP;

Inventors:

Hideaki Yamauchi, Kawasaki, JP;

Daisuke Matsubara, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L027/108 ; H01L029/76 ; H01L029/94 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract

The semiconductor device comprises a semiconductor substrate; a capacitor elementformed above the semiconductor substrate and including a lower electrode, a capacitor insulation filmformed on the lower electrode and an upper electrodeformed on the capacitor insulation film; a shield layerformed at least either of above and below the capacitor element; and a lead-out interconnection layerformed between the capacitor element and the shield layer and electrically connected to the lower electrode or the upper electrode, a plurality of holesbeing formed in each of the shield layer and the lead-out interconnection layer. The shield layers are formed above and below the MIM capacitor, whereby combination of noises with the MIM capacitor can be prevented.


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