The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Sep. 12, 2003
Applicants:

Naoya Sotani, Mizuho, JP;

Isao Hasegawa, Gifu, JP;

Inventors:

Naoya Sotani, Mizuho, JP;

Isao Hasegawa, Gifu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/26 ;
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device capable of obtaining a high-density laser beam necessary for crystallizing a semiconductor layer or activating an impurity while miniaturizing a lens group provided on the outlet of an optical fiber member is provided. This method of fabricating a semiconductor device comprises steps of connecting a laser oscillator oscillating a near infrared laser beam and an irradiation optical system with each other through an optical fiber member having a single core part and heating a semiconductor layer by irradiating the near infrared laser beam from the irradiation optical system.


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