The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Oct. 30, 2001
Applicant:
Emmanuel Collard, Tours, FR;
Inventor:
Emmanuel Collard, Tours, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/28 ; H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
The invention concerns a method for making a vertical Schottky diode on a highly doped N-type silicon carbide substrate (), comprising steps which consist in forming an N-type lightly doped epitaxial layer (); etching out a peripheral trench at the active zone of the diode; forming a type P doped epitaxial layer; carrying out a planarization process so that a ring () of the P type epitaxial layer remains in the trench; forming an insulating layer () on the outer periphery of the component, said insulating layer partly covering said ring; and depositing a metal () capable of forming a Schottky barrier with the N type epitaxial layer.