The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jul. 22, 2002
Daniel P. Docter, Santa Monica, CA (US);
Kursad Kiziloglu, Los Angeles, CA (US);
Daniel P. Docter, Santa Monica, CA (US);
Kursad Kiziloglu, Los Angeles, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
Disclosed is a method of reducing the conductivity/charge of a layer of group III-V semiconductor doped with Sn. The method includes the steps of: forming an region of SiOon the semiconductor layer; annealing at least the semiconductor layer and the region of SiOat a temperature sufficiently high to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO; and removing the region of SiOafter the annealing step is performed. The method can be used, for example, during the manufacture of HEMT, PHEMT, MESFET and HBT devices.