The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Oct. 01, 2002
Markus Hammer, Saal A.D. Donau, DE;
Markus Hammer, Saal A.D. Donau, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating an integrated semiconductor configuration includes generating a polycrystalline layer at a surface of a base layer and doping the polycrystalline layer. An oxide layer is generated at the polycrystalline layer by rapid thermal oxidation so that the polycrystalline layer can be precisely structured. The method further includes structuring the main layer and performing the thermal oxidation at temperatures above 900° C. for less than 65 seconds. The method also includes carrying out the thermal oxidation as an initial processing step (after generating the main layer) at a temperature of at least substantially equal to the temperature for generating the main layer. A related semiconductor configuration and memory unit are also provided.