The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Dec. 06, 2002
Sheldon Aronowitz, San Jose, CA (US);
Mohammed Mirabedini, Redwood City, CA (US);
Sheldon Aronowitz, San Jose, CA (US);
Mohammed Mirabedini, Redwood City, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method of preparing a polysilicon gate to minimize gate depletion and dopant penetration and to increase conductivity is revealed. Several monolayers of atomic are condensed onto a gate dielectric. Polysilicon is deposited onto the calcium and patterned in a standard way. The exposed calcium is then removed by raising the temperature to approximately 600° C. The calcium remaining between the gate dielectric and the polysilicon blocks channeling of dopant to minimize depletion and penetration, increase conductivity, and allow for longer and higher-temperature annealing.