The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Dec. 11, 2001
Applicants:

Hae Sik Yang, Daejon-Shi, KR;

Chi Hoon Jun, Daejon-Shi, KR;

Chang Auck Choi, Daejon-Shi, KR;

Youn Tae Kim, Daejon-Shi, KR;

Inventors:

Hae Sik Yang, Daejon-Shi, KR;

Chi Hoon Jun, Daejon-Shi, KR;

Chang Auck Choi, Daejon-Shi, KR;

Youn Tae Kim, Daejon-Shi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N027/28 ; G01N027/327 ;
U.S. Cl.
CPC ...
Abstract

The present invention relates to a microelectrode, a microelectrode array, and a method of manufacturing the microelectrode of which temperature can be controlled. The microelectrode comprises a sealed cavity formed in a silicon substrate for thermal isolation, a microheater formed on the sealed cavity, and an electrode heated indirectly by the microheater. According to the present invention, it is possible to manufacture with CMOS process the microelectrode and the microelectrode array which have excellent electric insulation and thermal isolation between a microheater and a silicon substrate, which has a small power consumption, which has high heating and cooling speed and which has no corrosion.


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