The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Apr. 30, 2003
Applicants:
Koji Shimazawa, Chuo-ku, JP;
Satoru Araki, Chuo-ku, JP;
Inventors:
Koji Shimazawa, Chuo-ku, JP;
Satoru Araki, Chuo-ku, JP;
Assignee:
TDK Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B005/127 ; H04R031/00 ;
U.S. Cl.
CPC ...
Abstract
A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. The pinned layer and the tunnel barrier layer have sidewalls formed through etching. The TMR element further comprises a deposition layer made of a material that is separated by etching and deposits on the sidewalls and undergoes oxidation.
Shimazawa, Koji. (2005). Methods of manufacturing a tunnel magnetoresistive element, thin-film magnetic head and memory element (U.S. Patent No. 6895658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6895658
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile