The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2005

Filed:

May. 21, 2003
Applicants:

Brian L. Bircumshaw, Berkeley, CA (US);

Albert P. Pisano, Danville, CA (US);

Oliver M. O'reilly, Berkeley, CA (US);

Inventors:

Brian L. Bircumshaw, Berkeley, CA (US);

Albert P. Pisano, Danville, CA (US);

Oliver M. O'Reilly, Berkeley, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H009/70 ; H01S003/097 ;
U.S. Cl.
CPC ...
Abstract

A MEMS resonator includes an annular resonator body defined by an inner radius and an outer radius, a first electrode positioned within the inner radius and spaced from the resonator body, and a second electrode positioned around the annular resonator body and spaced from the outer radius. The first electrode and the second electrode provide for capacitive drive of the resonator body and capacitive sense of the resonator body. Piezo-resistive sense and piezoelectric drive/sense techniques can also be utilized. The overall extent can be smaller than 1 cmin area and positioned on a supporting substrate by a plurality of anchors. The substrate can comprise an RF transceiver integrated circuit with the anchors connecting the drive electrode and sense electrode to the integrated circuit. The resonator is readily fabricated using conventional semiconductor integrated circuit fabrication techniques.


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