The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2005

Filed:

Oct. 06, 2003
Applicants:

Barbara A. Averill, Newburgh, NY (US);

Terence Kane, Wappingers Falls, NY (US);

Darrell L. Miles, Wappingers Falls, NY (US);

Richard W. Oldrey, Clintondale, NY (US);

John D. Sylvestri, Poughkeepsie, NY (US);

Inventors:

Barbara A. Averill, Newburgh, NY (US);

Terence Kane, Wappingers Falls, NY (US);

Darrell L. Miles, Wappingers Falls, NY (US);

Richard W. Oldrey, Clintondale, NY (US);

John D. Sylvestri, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R031/26 ;
U.S. Cl.
CPC ...
Abstract

A method for implementing backside probing of a semiconductor device includes isolating an identified defect area on a backside of the semiconductor device, and milling the identified defect area to an initial depth. Edges of the identified defect area are masked, wherein unmasked semiconductor material, beginning at the initial depth, is etched for a plurality of timed intervals until one or more active devices are reached. The one or more active devices are electrically probed.


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