The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6894389 B1

PDF
Full Text
Expired
Date of Patent:
May. 17, 2005

Filed:

Jun. 24, 2003
Applicant:

Shinobu Isobe, Tateyama, JP;

Inventor:

Shinobu Isobe, Tateyama, JP;

Assignee:

UMC Japan, Chiba-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L023/48 ;
U.S. Cl.
CPC ...
Abstract

In a method for manufacturing a semiconductor device according to the present invention, a back surface on a silicon wafer is ground and, after that, mirror-finished. A breakable layer on a back surface is removed. A silicon wafer is formed in the silicon wafer has a back surface in which a crystalline layer which is disposed innermore than the breakable layer is exposed. Bumps are formed on predetermined positions on a surface on the silicon wafer. By doing this, it is possible to provide a semiconductor device and a method for manufacturing therefore in which it is possible to prevent a crack from being formed on the semiconductor base board caused by a stress in a process for forming the bumps. As a result, it is possible to improve the production yield in the process for forming the bumps. Also, it is possible to realize more integration in the semiconductor device by a lower production cost.


Find Patent Forward Citations

Isobe, Shinobu. (2005). Semiconductor device and manufacturing method therefor (U.S. Patent No. 6894389). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6894389

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