The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Feb. 14, 2003
Applicants:
Peter Nelle, München, DE;
Matthias Stecher, München, DE;
Inventors:
Peter Nelle, München, DE;
Matthias Stecher, München, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L027/082 ;
U.S. Cl.
CPC ...
Abstract
A vertical bipolar transistor has a J-FET incorporated in an epitaxial layer. The pinch-off voltage of the J-FET is less than the collector-emitter breakdown voltage of a bipolar transistor without the J-FET. This results in a considerable increase in the collector-emitter breakdown voltage up to 30 V or more being possible without having to except limitations with regard to dielectric strength and on resistivity