The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Dec. 27, 2002
Kazuhiko Okawa, Chino, JP;
Takayuki Saiki, Suwa, JP;
Kazuhiko Okawa, Chino, JP;
Takayuki Saiki, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The invention makes it possible to form thyristers and SCRs that show a good discharge efficiency upon application of static electricity in semiconductor devices using a SOI substrate. A semiconductor device is equipped with a connection terminal for connection with an external element, a dielectric substrate having a semiconductor layer formed therein, a first region of a first conductive type that is formed in the semiconductor layer and electrically connected to the connection terminal, a second region of a second conductive type that is formed in the semiconductor layer and electrically connected to the first region, a third region of the first conductive type that is formed adjacent to the second region in the semiconductor layer, and a fourth region of the second conductive type that is formed adjacent to the third region in the semiconductor layer.