The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Feb. 14, 2001
Applicants:
Harald Bachhofer, München, DE;
Georg Braun, München, DE;
Thomas Peter Haneder, München, DE;
Wolfgang Hönlein, Unterhaching, DE;
Marc Ullmann, Hamburg, DE;
Inventors:
Harald Bachhofer, München, DE;
Georg Braun, München, DE;
Thomas Peter Haneder, München, DE;
Wolfgang Hönlein, Unterhaching, DE;
Marc Ullmann, Hamburg, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
The state of a ferroelectric transistor in a memory cell is read or stored, and the threshold voltage of further ferroelectric transistors in further memory cells in the memory matrix is increased during the reading or storing, or is increased permanently. A memory configuration including ferroelectric memory cells is also provided.