The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6894317 B1

PDF
Full Text
Expired
Date of Patent:
May. 17, 2005

Filed:

Jun. 11, 2002
Applicant:

Naoki Nakajo, Nishikasugai-gun, JP;

Inventor:

Naoki Nakajo, Nishikasugai-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L033/00 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor element including an electrically insulating substrate, semiconductor layers including first and second semiconductor layers of different conduction types and formed on the electrically insulating substrate, a first electrode formed on the first semiconductor layer, and a second electrode formed on the second semiconductor layer revealed by etching at least the first semiconductor layer, wherein a die-bonding electrode is formed on a side surface of the second electrode, on a side surface of the second semiconductor layer and on a region of from a side surface to a bottom surface of the electrically insulating substrate. Metal-metal contact is formed between the die-bonding electrode and the side surface of the second electrode, so that low-resistance contact is obtained here.


Find Patent Forward Citations

Nakajo, Naoki. (2005). Semiconductor element and method for producing the same (U.S. Patent No. 6894317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6894317

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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