The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2005

Filed:

Oct. 29, 2001
Applicant:

Hiroaki Kakinuma, Tokyo, JP;

Inventor:

Hiroaki Kakinuma, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L031/00 ;
U.S. Cl.
CPC ...
Abstract

A photodiode is provided which can operate at a high rate and is suitable for optical communications. The photodiode with a pin-type configuration of an end surface incidence type includes a first photodiode unit having a first n-type blocking layer, a first light-absorbing layer constituted by an intrinsic semiconductor, and a first p-type blocking layer on a semiinsulating substrate; a second photodiode unit having layers of the same configuration formed thereon; a contact layer; a first electrode; and a second electrode, wherein the thickness of each light-absorbing layer is half that in a conventional monolayer photodiode. As a result, the maximum travel time of the carriers (electrons and holes) in each photodiode unit is reduced by half and the photodiode can operate at a rate higher than that of the conventional photodiode.


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