The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Jan. 22, 2004
Kwan Ju Koh, Bucheon-si, KR;
Kwan Ju Koh, Bucheon-si, KR;
ANAM Semiconductor, Inc., Seoul, KR;
Abstract
To manufacture a non-volatile memory, an oxide film is deposited on a substrate, a flash device area and a logic gate area are removed and a tunnel oxide layer is stacked on an opened surface of the substrate. A first polysilicon is stacked over the resultant structure, a polish is carried out and the oxide film is removed. An LDD is formed in an upper portion of the substrate excepting an area occupied by the tunnel oxide layer, a sidewall is deposited on a side of the first polysilicon, a drain and a source are generated beneath the LDD excepting an area contacted to the sidewall and a TEOS is stacked on the resultant structure excepting the flash device area. An ONO layer is deposited over the resultant structure, a second polysilicon is stacked over the ONO layer, a polish is carried out and the TEOS is removed.