The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Dec. 03, 2002
Witold Kula, Cupertino, CA (US);
Witold Kula, Cupertino, CA (US);
Silicon Magnetic Systems, San Jose, CA (US);
Abstract
A method for oxidizing a semiconductor topography is provided, which includes generating a plasma from a first gas comprising oxygen and a second gas adapted to enhance the generation of oxygen radicals from the first gas. In addition, the method includes extracting the oxygen radicals from the plasma and diffusing the oxygen radicals into one or more layers of the topography. In general, the second gas may include any gas having a component adapted to enhance the generation of oxygen radicals from the first gas. For example, in some embodiments, the second gas may include a gas including nitrogen. In such an embodiment, the ratio of the first gas to the second gas may be adapted to prevent the introduction of nitrogen within the oxidized topography. In addition or alternatively, such a method may include oxidizing a portion of a layer which has a thickness greater than approximately 6 angstroms.