The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Apr. 15, 2002
Applicants:
Kwang Chul Joo, Kyoungki-do, KR;
Kee Jeung Lee, Seoul, KR;
Inventors:
Kwang Chul Joo, Kyoungki-do, KR;
Kee Jeung Lee, Seoul, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Ich'on, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A non-volatile memory device and a manufacturing method thereof are disclosed. The non-volatile memory device includes a gate insulating film formed on a semiconductor substrate, a floating gate formed on the gate insulating film, a dielectric film comprising a (TaO)(TiO)N film on the floating gate, and a control gate formed on the dielectric film. Thus, large charge capacitance values can be obtained compared to a similarly sized device using an ONO or TaOthin film dielectric while simultaneously simplifying the manufacturing process.