The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2005

Filed:

Sep. 27, 2002
Applicants:

You-kyoung Lee, Suwon-si, KR;

Sung-chul Kang, Seongnam-si, KR;

Jin-ho Ju, Seoul, KR;

Dong-ki Lee, Seoul, KR;

Seung-uk Lee, Seoul, KR;

Hoon Kang, Seoul, KR;

Inventors:

You-Kyoung Lee, Suwon-si, KR;

Sung-Chul Kang, Seongnam-si, KR;

Jin-Ho Ju, Seoul, KR;

Dong-Ki Lee, Seoul, KR;

Seung-Uk Lee, Seoul, KR;

Hoon Kang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F007/023 ; G03F007/30 ;
U.S. Cl.
CPC ...
Abstract

Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.


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