The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Sep. 25, 2000
Ryouji Hiroyama, Kyotanabe, JP;
Yasuhiko Nomura, Moriguchi, JP;
Koutarou Furusawa, Higashiosaka, JP;
Kunio Takeuchi, Joyo, JP;
Shigeyuki Okamoto, Kobe, JP;
Ryouji Hiroyama, Kyotanabe, JP;
Yasuhiko Nomura, Moriguchi, JP;
Koutarou Furusawa, Higashiosaka, JP;
Kunio Takeuchi, Joyo, JP;
Shigeyuki Okamoto, Kobe, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
A semiconductor laser device is characterized in that an angle θ of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70° and not more than 117°, a p-type cladding layer is made of AlGaAs, a first current blocking layer is made of AlGaAs, the distance between an emission layer and the first current blocking layer satisfies the relation of t≦0.275/(1−(X2−X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 μm and not more than 5 μm.