The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Sep. 21, 2000
Applicants:
Yasuhiko Nomura, Moriguchi, JP;
Nobuhiko Hayashi, Osaka, JP;
Masayuki Hata, Hirakata, JP;
Masayuki Shono, Hirakata, JP;
Inventors:
Yasuhiko Nomura, Moriguchi, JP;
Nobuhiko Hayashi, Osaka, JP;
Masayuki Hata, Hirakata, JP;
Masayuki Shono, Hirakata, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka-fu, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S005/00 ;
U.S. Cl.
CPC ...
Abstract
An SiNfilm is formed on partial side surfaces and an electrode forming surface excluding an n-side electrode of a first contact layer, the side surfaces of each layer, the upper surface of a second cladding layer and the side surfaces of a ridge portion. An SiOfilm is formed on the SiNfilm. The SiNfilm and the SiOfilm form a dielectric film.