The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2005

Filed:

Nov. 09, 2001
Applicants:

Richard T. Sahara, Watertown, MA (US);

Angela Hohl-abichedid, Beverly, MA (US);

Hanh LU, North Andover, MA (US);

Inventors:

Richard T. Sahara, Watertown, MA (US);

Angela Hohl-Abichedid, Beverly, MA (US);

Hanh Lu, North Andover, MA (US);

Assignee:

Corning Lasertron, Inc., Bedford, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S003/08 ;
U.S. Cl.
CPC ...
Abstract

An integrated semiconductor device comprising a laser on a substrate, the laser having an active layer and a current-induced grating, such as a current-injection complex-coupled grating, within a laser cavity producing a single-mode output light signal at high data rates (>622 Mb/sec) in isolator-free operation. The grating has a coupling strength product κL greater than 3, where κ is the coupling coefficient and L is the length of the laser cavity. In certain embodiments, the laser is a distributed feedback (DFB) laser that emits light at a wavelength of about 1.5 μm. The strong current-induced grating prevents mode hopping between multiple degenerate Bragg modes. The laser is also characterized by excellent immunity from optical feedback, and can be operated without an isolator at high data rates.


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