The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
May. 09, 2003
Thong Anthony Huynh, Fremont, CA (US);
Thong Anthony Huynh, Fremont, CA (US);
Maxim Integrated Products, Inc., Sunnyvale, CA (US);
Abstract
Low voltage drop ORing circuits with zero recovery time and reverse current protection. In use, a MOSFET is coupled between a power supply and a load in a multiple power supply, single load system, or between a power supply and a load in a single power supply, multiple load system, or in both locations in multiple power supply, multiple load systems. A controller senses the current through the MOSFET, and turns the MOSFET off when the current falls below a predetermined threshold current. This allows time for circuit delays and the discharge of the gate of the MOSFET to turn the MOSFET off before the current through the MOSFET car reverse. Turn-on of the MOSFET when the current exceeds the threshold may be purposely slowed to avoid current spikes. Addition of another MOSFET controlled by the controller adds a hot swap capability and the control of the Vslew rate. Various other features and embodiments are disclosed, including various current sensing techniques and circuits using transistors other than MOSFETs.