The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2005

Filed:

Feb. 27, 2003
Applicants:

Hiroyuki Sugamoto, Kasugai, JP;

Hidetoshi Tanaka, Kasugai, JP;

Yasushige Ogawa, Kasugai, JP;

Inventors:

Hiroyuki Sugamoto, Kasugai, JP;

Hidetoshi Tanaka, Kasugai, JP;

Yasushige Ogawa, Kasugai, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R031/28 ;
U.S. Cl.
CPC ...
Abstract

The present invention provides a synchronous semiconductor device suitable for improving the efficiency of application of electrical stresses to the device, an inspection system and an inspection method thereof in order to efficiently carrying out a burn-in stress test. A command latch circuit having an access command input will output a low-level pulse in synchronism with an external clock. The pulse will pass through a NAND gate of test mode sequence circuit and a common NAND gate to output a low-level internal precharge signal, which will reset a word line activating signal from the control circuit. Simultaneously, an internal precharge signal passing through the NAND gate will be delayed by an internal timer a predetermined period of time to output through the NAND gate a low-level internal active signal, which will set a word line activating signal from the control circuit.


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