The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2005

Filed:

Apr. 28, 2000
Applicant:

Kazuhisa Sakamoto, Kyoto, JP;

Inventor:

Kazuhisa Sakamoto, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L027/082 ; H01L027/102 ; H01L029/70 ; H01L031/11 ;
U.S. Cl.
CPC ...
Abstract

A base contact section of a planar structure electrically connecting a base electrode to a base region of a bipolar transistor is constructed of a repeating structure in a plan view, in which a high impurity concentration region of the same conductivity type as that of the base region and a region of the reverse conductivity type from that of the base region or low concentration region of the same conductivity type as that of the base region, arranged in an alternately manner starting with a high impurity concentration region of the same conductivity type as that of the base region from an emitter region side. With such a structure, accumulation of minor carriers in the base contact section can be suppressed, a high switching speed can be achieved and reduction in power consumption can be realized. Further, the emitter region is formed in a configuration of a plurality of stripes and the base region to which a base electrode is not connected is formed in each of the emitter regions of a stripe pattern, thereby enabling not only a junction area between the emitter regions and the base region to be increased with no space for the base electrode provided but also a safe operation area to be wider.


Find Patent Forward Citations

Sakamoto, Kazuhisa. (2005). Semiconductor device with bipolar transistor (U.S. Patent No. 6891250). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6891250

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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