The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jan. 09, 2002
Yuhzoh Tsuda, Tenri, JP;
Takayuki Yuasa, Ikoma-gun, JP;
Shigetoshi Ito, Ikoma, JP;
Mototaka Taneya, Nara, JP;
Yukio Yamasaki, Daito, JP;
Yuhzoh Tsuda, Tenri, JP;
Takayuki Yuasa, Ikoma-gun, JP;
Shigetoshi Ito, Ikoma, JP;
Mototaka Taneya, Nara, JP;
Yukio Yamasaki, Daito, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride semiconductor light emitting device includes a processed substrate () including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer () covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer () including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer () and a p type layer () over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.