The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jun. 02, 2003
Mayumi Nakasato, Ogaki, JP;
Makoto Izumi, Mizuho, JP;
Kazuhiro Sasada, Hashima, JP;
Masahiro Oda, Itami, JP;
Toru Dan, Gifu, JP;
Mayumi Nakasato, Ogaki, JP;
Makoto Izumi, Mizuho, JP;
Kazuhiro Sasada, Hashima, JP;
Masahiro Oda, Itami, JP;
Toru Dan, Gifu, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A method of fabricating a semiconductor device capable of improving reliability of a gate insulator film is obtained. This method of fabricating a semiconductor device comprises a step of forming a gate insulator film on the main surface of a semiconductor layer by heat treatment, and the step of forming the gate insulator film includes a step of performing the heat treatment in an atmosphere containing oxidizing gas at a temperature exceeding the temperature causing viscous flow of the gate insulator film thereby forming the gate insulator film on the main surface of the semiconductor layer.