The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Aug. 09, 2002
Sergey Karpov, St. Petersburg, RU;
Alexander Usikov, Silver Spring, MD (US);
Heikki I. Helava, Piedmont, CA (US);
Denis Tsvetkov, Gaithersburg, MD (US);
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Sergey Karpov, St. Petersburg, RU;
Alexander Usikov, Silver Spring, MD (US);
Heikki I. Helava, Piedmont, CA (US);
Denis Tsvetkov, Gaithersburg, MD (US);
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Technologies and Deviles International, Inc., Silver Spring, MD (US);
Abstract
A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.