Nitride semiconductor, semiconductor device, and manufacturing methods for the same

Abstract

A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.