The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jun. 25, 2002
Liann-be Chang, Tao-Yuan, TW;
Li-hsin Kuo, Taipei, TW;
Li-zen Hsieh, Tu-Cheng, TW;
Li-yuan Chang, Chung-Ho, TW;
Liann-Be Chang, Tao-Yuan, TW;
Li-Hsin Kuo, Taipei, TW;
Li-Zen Hsieh, Tu-Cheng, TW;
Li-Yuan Chang, Chung-Ho, TW;
Uni Light Technology Inc., Tao-Yuan, TW;
Abstract
A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.