The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
May. 29, 2003
Takehiko Okajima, Tokyo, JP;
Takehiko Okajima, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A silicon oxide film formed on a compound semiconductor substrate is evaluated by estimating the quantity of silicon-silicon bonds operating as electron traps in the silicon oxide film from a peak with a wave number of 880/centimeter in the Fourier-transform infrared spectrum of the silicon oxide film. This peak, which is an indicator of silicon-silicon stretching vibration, provides an index of expected power performance degradation during operation of field-effect transistors incorporating the silicon oxide film as an interlayer. Power degradation can be reduced by fabricating the semiconductor device under conditions that reduce the estimated quantity of silicon-silicon bonds, without the need to measure the power degradation.