The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Aug. 01, 2003
Jeffrey S. Cross, Kawasaki, JP;
Jeffrey S. Cross, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes compromises SRO that contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrO. A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile