The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Apr. 21, 2003
Thomas Doderer, Munich, DE;
Wei Hwang, Armonk, NY (US);
Chang C. Tsuei, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A microelectronic device includes a gate layer adapted to receive an input voltage. An insulating layer is formed on the gate layer, and a conductive channel layer is formed on the insulating layer and carries current between a source and a drain. The conductive channel layer is adapted to provide a dual channel. The dual channel includes both a p-channel and an n-channel wherein one of the p-channel and the n-channel are selectively enabled responsive to the input voltage polarity. A method for forming the device and applications are also disclosed and claimed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile