The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Dec. 18, 2001
David P. Mancini, Fountain Hills, AZ (US);
Douglas J. Resnick, Phoenix, AZ (US);
Carlton Grant Willson, Austin, TX (US);
David P. Mancini, Fountain Hills, AZ (US);
Douglas J. Resnick, Phoenix, AZ (US);
Carlton Grant Willson, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
University of Texas System, Austin, TX (US);
Abstract
This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template () is formed having a substrate () and a charge dissipation layer (), and a patterned imageable relief layer, () formed on a surface () of the substrate () using radiation. The template () is used in the fabrication of a semiconductor device () for affecting a pattern in the device () by positioning () the template () in close proximity to semiconductor device () having a radiation sensitive material () formed thereon and applying a pressure () to cause the radiation sensitive material to flow into the relief image present on the template (). Radiation () is then applied through the template () to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template () is then removed to complete fabrication of semiconductor device ().