The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jun. 13, 2003
Stephen L. Buchwalter, Hopewell Junction, NY (US);
Gareth Geoffrey Hougham, Ossining, NY (US);
Kang-wook Lee, Yorktown Heights, NY (US);
John J. Ritsko, Mount Kisko, NY (US);
Mary Elizabeth Rothwell, Ridgefield, CT (US);
Peter M. Fryer, Yorktown Heights, NY (US);
Stephen L. Buchwalter, Hopewell Junction, NY (US);
Gareth Geoffrey Hougham, Ossining, NY (US);
Kang-Wook Lee, Yorktown Heights, NY (US);
John J. Ritsko, Mount Kisko, NY (US);
Mary Elizabeth Rothwell, Ridgefield, CT (US);
Peter M. Fryer, Yorktown Heights, NY (US);
Intellectual Business Machines Corporation, Armonk, NY (US);
Abstract
New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.