The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Dec. 09, 2002
Applicants:
Won Taeg Lim, Seoul, KR;
Shi Jong Leem, Seoul, KR;
Inventors:
Won Taeg Lim, Seoul, KR;
Shi Jong Leem, Seoul, KR;
Assignee:
LG Electronics Inc., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S005/00 ;
U.S. Cl.
CPC ...
Abstract
Disclosed is a semiconductor laser device and manufacturing method thereof in which light absorption in a facet decreases and stable high power laser beam is generated. The semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: a Zn diffusion source layer on a facet of the stack structure; and a window layer between the Zn diffusion source layer and the stack structure, for preventing light absorption.