The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Oct. 11, 2001
Toshiaki Kuniyasu, Kaisei-machi, JP;
Fusao Yamanaka, Kaisei-machi, JP;
Toshiaki Fukunaga, Kaisei-machi, JP;
Toshiaki Kuniyasu, Kaisei-machi, JP;
Fusao Yamanaka, Kaisei-machi, JP;
Toshiaki Fukunaga, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa, JP;
Abstract
An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiOfilm is formed on the entire surface. After a window is formed in a portion of the SiOfilm corresponding to a ridge portion, a p-electrode is formed on a region of the SiOfilm other than the device perimeter.