The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
May. 29, 2003
Lei L. Mercado, Gilbert, AZ (US);
Vijay Sarihan, Paradise Valley, AZ (US);
Young Sir Chung, Chandler, AZ (US);
James Jen-ho Wang, Phoenix, AZ (US);
Edward R. Prack, Austin, TX (US);
Lei L. Mercado, Gilbert, AZ (US);
Vijay Sarihan, Paradise Valley, AZ (US);
Young Sir Chung, Chandler, AZ (US);
James Jen-Ho Wang, Phoenix, AZ (US);
Edward R. Prack, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In accordance with one embodiment, a stress buffer () is formed between a power metal structure () and passivation layer (). The stress buffer () reduces the effects of stress imparted upon the passivation layer () by the power metal structure (). In accordance with an alternative embodiment, a power metal structure (A) is partitioned into segments (), whereby electrical continuity is maintained between the segments () by remaining portions of a seed layer () and adhesion/barrier layer (). The individual segments () impart a lower peak stress than a comparably sized continuous power metal structure ().